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DATA SHEET
GaAs INTEGRATED CIRCUIT
PG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The PG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The PG110P is suitable for the gain stage required high gain characteristic of the microwave communication system and the measurement equipment.
FEATURES
* Ultra wide band : 2 to 8 GHz * High Power Gain : GP = 15 dB TYP. * Medium Power @f = 2 to 8 GHz : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz
ORDERING INFORMATION
PART NUMBER FORM Chip
PG110P
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Supply Voltage Input Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature VDD VIN Pin Ptot*1 Topr*2 Tstg +10 -5 to +0.6 +10 1.5 -65 to +125 -65 to +125 V V dBm W C C
*1 Mounted with AuSn hard solder *2 The temperature of base material beside the chip
RECOMMENDED OPERATING CONDITIONS (TA = 25 C)
Supply Voltage Input Power VDD Pin +8 0.2 -5 V dBm
Document No. P11882EJ2V0DS00 (2nd edition) (Previous No. ID-2454) Date Published September 1996 P Printed in Japan
(c)
1989
PG110P
ELECTRICAL CHARACTERISTICS (TA = 25 C)*3
CHARACTERISTIC Supply Current Power Gain Gain Flatness Input Return Loss Output Return Loss Isolation Output Power at 1 dB Gain Compression Point SYMBOL IDD GP MIN. 65 12 TYP. 135 15 1.5 6 7 30 10 10 10 40 14 MAX. 180 UNIT mA dB dB dB dB dB dBm TEST CONDITIONS VDD = +8 V f = 2 to 8 GHz
GP
RLin RLout ISL PO(1 dB)
*3 These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1. Fig. 1 4 pin Ceramic Package
Top View 4.5 MAX.
0.6 0.06
0.4 0.06
4.1 MIN.
0.1 0.06
2
1.48 MAX.
0.7 +0.2 -0.1
4.1 MIN.
4.6 MAX.
PG110P
TYPICAL CHARACTERISTICS (TA = 25 C)*4
POWER GAIN vs. FREQUENCY VDD = +8 V IDD = 132 mA 30
GP - Power Gain - dB
20
10
0
0
1
2
3
4
5
6
7
8
9
10
f - Frequency - GHz
INPUT RETURN LOSS vs. FREQUENCY VDD = +8 V IDD = 132 mA 0 RLin
RLin - Input Return Loss - dB RLout - Output Return Loss - dB
-10
-20 RLout -30
0
1
2
3
4
5
6
7
8
9
10
f - Frequency - GHz
ISOLATION vs. FREQUENCY 0 VDD = +8 V IDD = 132 mA -20
ISL - Isolation - dB
-40
-60
-80
0
1
2
3
4
5
6
7
8
9
10
f - Frequency - GHz
3
PG110P
OUTPUT POWER vs. INPUT POWER
20
Pout - Output Power - dBm
10
0 VDD = +8 V IDD = 132 mA f = 2 GHz f = 5 GHz f = 8 GHz -20 -10 0 10
Pin - Input Power - dBm
*4 These characteristics are measured for device mounted in the standard package shown in Fig. 1.
EQUIVALENT CIRCUIT
VDD
RL1
RL2
RF2
Active Load CRF
LL1 RF1 L2 Lin IN L1 RG1 RS1 CS C1 RG2 C4
LL3 LL2 L3 OUT C2 RG3 C3
LG1
4
PG110P
RECOMMENDED CHIP ASSEMBLY CONDITIONS
Die Attachment Atmosphere : N2 gas Temperature : 320 5 C AuSn Preform : 0.5 x 0.5 x 0.05t (mm), 1 pce. * The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not be used. Base Material : CuW, Cu, KV * Other material should not be used. Epoxy Die Attach is not recommended. Bonding Machine Wire Strength Atmosphere : TCB * USB is not recommended : 30 m diameter Au wire : 31 3 g : N2 gas Temperature : 260 5 C
Chip Bonding Diagram
VDD less than 300 m 50 to 100 m 200 to 500 m
VDD
5 GND
500 to 1 000 m IN OUT 200 to 500 m
GND 1
2 GND
GND 3
GND
4
not used
less than 200 m
5
PG110P
Recommended Wire Length 1. 500 to 1 000 m for Input (the longer the wire, the better the VSWR) 2. 200 to 500 m for Output (the shorter the wire, the better the VSWR) 3. It should be bonded via a chip capacitor for VDD. Wire length is 200 to 500 m 4. There are five GND pads but GND pad <2> is not used. Wire length is 200 m for <1>, <3> and <4>. Less than 300 m for <5>. Chip Size: 1.1 x 1.3 mm t = 140 m Pad Size : 100 x 100 m
6
PG110P
QUALITY ASSURANCE (Refer to GET-30116)
1. 100 % Tests 1-1 100 % DC Probe 1-2 Visual Inspection MIL-STD-883 Method 2010 Condition B 2. Tests on Sampling Basis 2-1 Bond Pull Tests (In case of recommended chip handling) MIL-STD-883 Method 2011 5 samples/wafer and 20 points tested Accept 0/Reject 1 2-2 Tests in Standard Package Test the electrical characteristics of chips assembled into the standard package used for PG110B 5 samples/wafer tested DC and RF measurement Accept 1/Reject 2 3. Warrantee NEC has a responsibility of quality assurance for the products within 180 days after delivered to customers where these are handled properly and stored in a desiccater with the flow of dry N2 gas. 4. Caution 4-1 Take great care to prevent static electricity. 4-2 Be sure that Die Attach is performed in N2 atmosphere.
7
PG110P
Caution
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Galium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

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